Bernard_S._Meyerson

Bernard S. Meyerson

Bernard S. Meyerson

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Bernard S. Meyerson (born June 2, 1954) is an American solid state physicist.

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Biography

Meyerson is a native of New York City, born on June 2, 1954.[1] After graduating from the City College of New York,[2] he completed a master's degree and doctorate at the City University of New York, and began working for IBM.[1][2]

Meyerson was elected a fellow of the American Physical Society in 1998, "for the invention of ultra-high vacuum chemical vapor deposition and its application to low temperature silicon epitaxy, especially the fabrication of SiGe heterojunction bipolar integrated circuits for wireless telecommunications."[3] The APS awarded him the George E. Pake Prize in 2011.[2] Meyerson received the J. J. Ebers Award in 2000 from the IEEE Electron Devices Society.[4] In 2002, Meyerson became an elected member of the National Academy of Engineering.[5]

References

  1. [1]
    "B. Meyerson". American Institute of Physics. Retrieved February 22, 2022.
  2. [2]
    "2011 George E. Pake Prize Recipient". American Physical Society. Retrieved February 22, 2022.
  3. [3]
    "APS fellow archive". American Physical Society. Retrieved February 22, 2022.
  4. [4]
    "Past J.J. Ebers Award Winners". Electron Devices Society, IEEE. Retrieved February 22, 2022.
  5. [5]
    "Dr. Bernard S. Meyerson". United States National Academy of Engineering. Retrieved February 22, 2022.
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